Datasheet4U Logo Datasheet4U.com

TK11A65D Datasheet Silicon N-Channel MOSFET

Manufacturer: Toshiba

Overview: TK11A65D MOSFETs Silicon N-Channel MOS (π-MOS) TK11A65D 1. Applications • Switching Voltage Regulators 2.

📥 Download Datasheet

Key Features

  • (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ. ) High forward transfer admittance: |Yfs| = 7.5 S (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed).

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo TK11A65D N-Channel MOSFET INCHANGE
INCHANGE Logo TK11A65W N-Channel MOSFET INCHANGE

More Datasheets from Toshiba

Part Number Description
TK11A65W Silicon N-Channel MOSFET
TK11A60D N-Channel MOSFET
TK11A45D N-Channel MOSFET
TK11A50D N-Channel MOSFET
TK11A55D N-Channel MOSFET
TK110U65Z Silicon N-Channel MOSFET
TK100A06N1 MOSFETs
TK100A08N1 MOSFETs
TK100E06N1 Silicon N-Channel MOSFET
TK100E08N1 Silicon N-Channel MOSFET