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TK12A55D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK12A55D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Ф3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
3.9 3.0 15.0 ± 0.3
1.14 ± 0.15
2.8 MAX. 13 ± 0.5
2.6 ± 0.1 4.5 ± 0.
TK12A55D Datasheet
