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TK12E60U - MOSFETs

Datasheet Summary

Features

  • (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ. ) High forward transfer admittance: |Yfs| = 7.0 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current.

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Datasheet Details

Part number TK12E60U
Manufacturer Toshiba Semiconductor
File Size 240.35 KB
Description MOSFETs
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TK12E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK12E60U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 4.
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