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TK12P60W - N-Channel MOSFET

Datasheet Summary

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK12P60W DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2012-09 1 2014-09-17 Rev.4.0 TK12P60W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source vol.

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Datasheet Details

Part number TK12P60W
Manufacturer Toshiba Semiconductor
File Size 243.33 KB
Description N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS (DTMOS) TK12P60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK12P60W DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2012-09 1 2014-09-17 Rev.4.0 TK12P60W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 11.5 A Drain current (pulsed) (Note 1) IDP 46.
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