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TK13E25D - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK13E25D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Gate-source voltage VGSS ±20 Drain current (DC) Drain current.

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Datasheet Details

Part number TK13E25D
Manufacturer Toshiba
File Size 236.95 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS (π-MOS) TK13E25D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK13E25D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 4.
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