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TK16G60W5 - Silicon N-Channel MOSFET

Key Features

  • (1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ. ) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source D2PAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain curren.

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Datasheet Details

Part number TK16G60W5
Manufacturer Toshiba
File Size 243.01 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK16G60W5 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TK16G60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK16G60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source D2PAK 4.