The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TK16J55D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK16J55D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
2.0
1.0
Unit: mm
15.9 MAX.
Ф3.2 ± 0.2
4.5
20.0 ± 0.3
9.0
2.0
3.3 MAX.
20.5 ± 0.
TK16J55D Datasheet
