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TK17E65W - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanch.

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Datasheet Details

Part number TK17E65W
Manufacturer Toshiba Semiconductor
File Size 250.04 KB
Description Silicon N-Channel MOSFET
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TK17E65W MOSFETs Silicon N-Channel MOS (DTMOS) TK17E65W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4.
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