TK18E10K3
TK18E10K3 is Silicon N-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon N-channel MOS (U-MOS)
1. Applications
- Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A)
3. Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
TO-220
4....
