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TK25A10K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK25A10K3
Swiching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) • Enhancement-model: Vth = 2.0 to 4.
TK25A10K3 Datasheet
