TK35N65W5 - Silicon N-Channel MOSFET

Toshiba

Key Features

(1) (2) (3) (4) Fast reverse recovery time: trr = 130 ns (typ. ) Low drain-source on-resistance: RDS(ON) = 0.08 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 2.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain curren.

TK35N65W5 silicon n-channel mosfet by Toshiba - Datasheet Preview

Datasheet Details

Part number	TK35N65W5
Manufacturer	Toshiba
File Size	248.88 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK35N65W5 Datasheet

Full PDF Text Transcription for TK35N65W5 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TK35N65W5. For precise diagrams, and layout, please refer to the original PDF.

TK35N65W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK35N65W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse recovery time: trr = 13...

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ators 2. Features (1) (2) (3) (4) Fast reverse recovery time: trr = 130 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.08 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 2.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4.

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