Datasheet4U Logo Datasheet4U.com

TK40A10N1 - Silicon N-Channel MOSFET

Key Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avala.

📥 Download Datasheet

Datasheet Details

Part number TK40A10N1
Manufacturer Toshiba
File Size 232.97 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK40A10N1 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK40A10N1 N-Channel MOSFET INCHANGE
TK40A06N1 N-Channel MOSFET INCHANGE
TK40E06N1 N-Channel MOSFET INCHANGE
TK40E10N1 N-Channel MOSFET INCHANGE
TK40J60U N-Channel MOSFET INCHANGE

Other Datasheets by Toshiba

Part Number Description
TK40A10J1 MOSFET
TK40A10K3 Field Effect Transistor
TK40A06N1 Silicon N-Channel MOSFET
TK40A08K3 MOSFET
TK40D10J1 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TK40A10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK40A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4.