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TK40J60T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS)
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TK40J60T
Switching Regulator Applications
15.9max. Ф3.2±0.2 1.0 4.5 9.0
Unit: mm
3.3max.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 40 80 400 576 40 40 150 -55~150 A W mJ A mJ °C °C Unit V V
1.8max. 0.6－0.1
＋0.3
1.0 －0.25
＋0.3
5.45±0.2
5.45±0.2 4.8max. 1 2 3 2.8
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range (Note 3)
1. Gate 2. Drain(heat sink) 3. Source
JEDEC JEITA TOSHIBA
⎯ SC-65 2-16C1B
Weight : 4.
TK40J60T Datasheet
