TK40S10K3Z
Features
(1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 m A)
3. Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
DPAK+
Start of mercial production
2011-03 2014-08-04 Rev.5.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3) (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating 100 ±20 40 80 93 98 40 175 -55 to 175 W m J A A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product...
