TK40X10J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
Switching Regulator, DC-DC Converter Applications Motor Drive Applications
Unit: mm
- Small gate charge
: Qg = 59 n C (typ.)
- Low drain-source ON-resistance: RDS (ON) = 15 mΩ(typ.)
- High forward transfer admittance: |Yfs| = 60 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
- Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current Repetitive avalanche energy (Note 3) Channel temperature (Note 4) Storage temperature range (Note 4)
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
±20
40 A
99 m J
12.5 m J
°C
- 55 to...
