TK50J60U
TK50J60U is MOSFETs manufactured by Toshiba.
Features
(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.056 Ω (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 m A)
3. Packaging and Internal Circuit
1: Gate (G) 2: Drain (D) (Heatsink) 3: Source (S)
TO-3P(N)
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Channel temperature Storage temperature (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 50 100 400 900 25 40 150 -55 to 150 W m J A m J A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of mercial production
2010-01 2013-12-26 Rev.5.0
5. Thermal Characteristics
Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 0.313 50 Unit /W
Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 2.52 m H, RG = 25 Ω, IAR = 25 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
2013-12-26...
