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TK56A12N1 - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK56A12N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 120 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit).

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Datasheet Details

Part number TK56A12N1
Manufacturer Toshiba Semiconductor
File Size 237.50 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-channel MOS (U-MOS-H) TK56A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK56A12N1 1: Gate 2: Drain 3: Source TO-220SIS 4.
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