Datasheet4U Logo Datasheet4U.com

TK5A45DA - Silicon N-Channel MOSFET

Key Features

  • (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.52 Ω (typ. ) High forward transfer admittance: |Yfs| = 1.5 S (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed).

📥 Download Datasheet

Datasheet Details

Part number TK5A45DA
Manufacturer Toshiba
File Size 228.60 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK5A45DA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK5A45DA N-Channel MOSFET INCHANGE
TK5A Current Transducer Topstek
TK5A50D N-Channel MOSFET INCHANGE
TK5A50D5 Silicon N-Channel MOSFET Toshiba
TK5A53D N-Channel MOSFET INCHANGE

Other Datasheets by Toshiba

Part Number Description
TK5A50D N-Channel MOSFET
TK5A53D N-Channel MOSFET
TK5A55D N-Channel MOSFET
TK5A60W MOSFETs
TK5A65D N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TK5A45DA MOSFETs Silicon N-Channel MOS (π-MOS) TK5A45DA 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.52 Ω (typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.