Datasheet4U Logo Datasheet4U.com

TK5P53D - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance : RDS(ON) = 1.2 Ω (typ. ) (2) High forward transfer admittance : |Yfs| = 2.8 S (typ. ) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 525 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK5P53D DPAK 1: Gate 2: Drain (Heatsink) 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2009-12 2015-08-03 Rev.1.0 TK5P53D 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise speci.

📥 Download Datasheet

Datasheet preview – TK5P53D

📁 Similar Datasheet

  • TK5P53D - N-Channel MOSFET (INCHANGE)
  • TK5P50D - N-Channel MOSFET (INCHANGE)
  • TK5P50D - N-Channel MOSFET (Toshiba)
  • TK5P60W - N-Channel MOSFET (INCHANGE)
  • TK5P60W5 - N-Channel MOSFET (INCHANGE)
  • TK5P60W5 - N-Channel MOSFET (Toshiba)
  • TK5P65W - N-Channel MOSFET (INCHANGE)
  • TK50A04K3 - N-Channel MOSFET (INCHANGE)
  • TK50J30D - N-Channel MOSFET (INCHANGE)
  • TK50J60U - N-Channel MOSFET (INCHANGE)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon N-Channel MOS (π-MOS) TK5P53D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 1.2 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.8 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 525 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK5P53D DPAK 1: Gate 2: Drain (Heatsink) 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2009-12 2015-08-03 Rev.1.0 TK5P53D 4.
Published: |