TK5P65W - Silicon N-Channel MOSFET

Product Overview

Toshiba Semiconductor

Part number	TK5P65W
Manufacturer	Toshiba Semiconductor
File Size	380.97 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK5P65W Datasheet
Additional preview pages of the TK5P65W datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 1.02 Ω(typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.17 mA) 3. Packaging and Internal Circuit TK5P65W 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1).

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Aug 25, 2017 |