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TK6A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK6A50D
Switching Regulator Applications
Ф3.2 ± 0.2 10 ± 0.3
Unit: mm
2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A 2.54 0.64 ± 0.15
• • • •
Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Drain-source voltage Gate-source voltage DC (Note Drain current 1) ymbol VDSS VGSS ID IDP PD 2) EAS IAR 6 EAR 3.5 Tch 150 Tstg −55 to 150 Rating 500 ±30 6 24 35 144 A W mJ A mJ °C °C Unit V V
15.0 ± 0.
TK6A50D Datasheet
