TK70J06K3 - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TK70J06K3
Manufacturer	Toshiba Semiconductor
File Size	227.52 KB
Description	MOSFETs
Datasheet	TK70J06K3 Datasheet
Additional preview pages of the TK70J06K3 datasheet.

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 20, 2014 |