TK7J90E
TK7J90E is Silicon N-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon N-Channel MOS (π-MOS)
1. Applications
- Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (Heatsink) 3: Source
TO-3P(N)
Start of mercial production
2013-12 2014-03-04 Rev.2.0
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