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TK7P50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK7P50D
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
6.6 ± 0.2 5.34 ± 0.13 1.08±0.2
Unit: mm
0.58MAX
1.01MAX
Absolute Maximum Ratings (Ta = 25°C)
0.07 ± 0.07 1.52
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1)
Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg
Rating 500 ±30 7 28 100 105 7 10 150 −55 to 150
Unit V V A W mJ A mJ °C °C
1
1. 2.
TK7P50D Datasheet
