TK7P50D
TK7P50D is Silicon N-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
Switching Regulator Applications
- -
- - Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 m A)
6.6 ± 0.2 5.34 ± 0.13 1.08±0.2
Unit: mm
0.58MAX
1.01MAX
Absolute Maximum Ratings (Ta = 25°C)
0.07 ± 0.07 1.52
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1)
Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg
Rating 500 ±30 7 28 100 105 7 10 150
- 55 to 150
Unit V V A W m J A m J °C °C
1. 2.
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
GATE DRAIN （HEAT SINK） 3. SOURCE
2.3 ± 0.1
0.76 ± 0.12
JEDEC JEITA TOSHIBA
⎯ ⎯ 2-7K1A
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.25 125 Unit
Internal Connection
2 °C/W °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.64 m H, RG = 25 Ω, IAR = 7 A Note 3: Repetitive rating:...
