TK7P60W5
TK7P60W5 is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) Fast reverse recovery time: trr = 75 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.35 m A)
3. Packaging and Internal Circuit
DPAK
1: Gate 2: Drain (Heatsink) 3: Source
Start of mercial production
2013-10
2014-09-17
Rev.4.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
Drain current (pulsed)
(Note 1)
Power dissipation
(Tc = 25)
Single-pulse avalanche energy
(Note 2)
92 m J
Avalanche current
Reverse drain current (DC)
(Note 1)
Reverse drain current...
