TK8A60DA Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) Switching Regulator Applications - - - - Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A) Unit:...