| Part number | TK8A60DA |
|---|---|
| Manufacturer | Toshiba |
| File Size | 191.28 KB |
| Description | Transistor |
| Datasheet | TK8A60DA-ToshibaSemiconductor.pdf |
|
|
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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TK8A60DA | N-Channel MOSFET | INCHANGE |
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TK8A60DA | N-Channel 650V Power MOSFET | VBsemi |
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