Datasheet4U Logo Datasheet4U.com

TK9A20DA - Silicon N-channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.26 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK9A20DA 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS ±20 Drain current (DC) Drain current (pulsed.

📥 Download Datasheet

Datasheet Details

Part number TK9A20DA
Manufacturer Toshiba
File Size 263.16 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TK9A20DA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK9A20DA N-Channel MOSFET INCHANGE
TK9A45D N-Channel MOSFET INCHANGE
TK9A55DA N-Channel MOSFET INCHANGE
TK9A60D N-Channel MOSFET INCHANGE
TK9A65W N-Channel MOSFET Toshiba

Other Datasheets by Toshiba

Part Number Description
TK9A45D Silicon N-channel MOSFET
TK9A55DA Silicon N-channel MOSFET
TK9A60D Silicon N-channel MOSFET
TK9A90E Silicon N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-Channel MOS (π-MOS) TK9A20DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.26 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK9A20DA 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.