Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
Switching Regulator Applications
Ф3.2 ± 0.2 10 ± 0.3
Unit: mm
2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A
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Low drain-source ON-resistance: RDS (ON) = 0.63 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.8 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 450 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1...
