TK9A55DA Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A - - - - Low drain-source ON resistance: RDS (ON) = 0.68 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.7 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement-mode: Vth = 2 to 4 V (VDS = 10 V, ID = 1...