Datasheet4U Logo Datasheet4U.com

TK9A90E - Silicon N-channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK9A90E TO-220SIS 1: Gate 2: Drain 3: Source Start of commercial production 2013-10 1 2014-03-04 Rev.3.0 TK9A90E 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drai.

📥 Download Datasheet

Datasheet Details

Part number TK9A90E
Manufacturer Toshiba
File Size 225.36 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TK9A90E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK9A90E N-Channel MOSFET INCHANGE
TK9A20DA N-Channel MOSFET INCHANGE
TK9A45D N-Channel MOSFET INCHANGE
TK9A55DA N-Channel MOSFET INCHANGE
TK9A60D N-Channel MOSFET INCHANGE

Other Datasheets by Toshiba

Part Number Description
TK9A20DA Silicon N-channel MOSFET
TK9A45D Silicon N-channel MOSFET
TK9A55DA Silicon N-channel MOSFET
TK9A60D Silicon N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-Channel MOS (π-MOS) TK9A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK9A90E TO-220SIS 1: Gate 2: Drain 3: Source Start of commercial production 2013-10 1 2014-03-04 Rev.3.0 TK9A90E 4.