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TLP321-2 - Photocoupler

Download the TLP321-2 datasheet PDF. This datasheet also covers the TLP321 variant, as both devices belong to the same photocoupler family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • listed in this document shall be made at the customer’s own risk.
  • Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TLP321_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TLP321,TLP321-2,TLP321-4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP321, TLP321-2, TLP321-4 Programmable Controllers DC−Output Module Telecommunication The TOSHIBA TLP321, −2 and −4 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP321−2 offers two isolated channels in an eight lead plastic DIP package, while the TLP321−4 provides four isolated channels in a sixteen plastic DIP package. TLP321 / −2 / −4 have high VCEO voltage (VCEO = 80V). · · · · Collector−emitter voltage: 80V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 5000Vrms (min.) UL recognized: UL1577, file no. E67349 TOSHIBA Weight: 0.