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TLP321-2 - Photocoupler

This page provides the datasheet information for the TLP321-2, a member of the TLP321 Photocoupler family.

Features

  • listed in this document shall be made at the customer’s own risk.
  • Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste.

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Datasheet preview – TLP321-2

Datasheet Details

Part number TLP321-2
Manufacturer Toshiba Semiconductor
File Size 228.21 KB
Description Photocoupler
Datasheet download datasheet TLP321-2 Datasheet
Additional preview pages of the TLP321-2 datasheet.

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Full PDF Text Transcription

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TLP321,TLP321-2,TLP321-4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP321, TLP321-2, TLP321-4 Programmable Controllers DC−Output Module Telecommunication The TOSHIBA TLP321, −2 and −4 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP321−2 offers two isolated channels in an eight lead plastic DIP package, while the TLP321−4 provides four isolated channels in a sixteen plastic DIP package. TLP321 / −2 / −4 have high VCEO voltage (VCEO = 80V). · · · · Collector−emitter voltage: 80V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 5000Vrms (min.) UL recognized: UL1577, file no. E67349 TOSHIBA Weight: 0.
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