TMD1414-2C
FEATURES n HIGH POWER P1d B=34.5d Bm at 13.75GHz to 14.5GHz n HIGH GAIN G1d B=26.0d B at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature SYMBOL VDD VGG Pin Tf Tstg UNIT V V d Bm °C °C RATING 10 -10 20 -40 ∼ +90 -65 ∼ +175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Operating Frequency Output Power at 1d B Gain pression Point 1d B Gain pression Point Gain Flatness Drain Current Power Added Efficiency ∆G IDD ηadd G1d B VDD=7V VGG=-5V d B d B A % 21.0 26.0 1.4 29 ±1.0 1.8 SYMBOL CONDITIONS UNIT GHz d Bm MIN. 13.75 32.0 TYP. MAX. 34.5 14.5 f
P1d B u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No...
