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MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA
TMD1414-2C
FEATURES
n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm °C °C RATING 10 -10 20 -40 ∼ +90 -65 ∼ +175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Operating Frequency Output Power at 1dB Gain Compression Point 1dB Gain Compression Point Gain Flatness Drain Current Power Added Efficiency ∆G IDD ηadd G1dB VDD=7V VGG=-5V dB dB A % 21.0 26.0 1.4 29 ±1.0 1.
TMD1414-2C Datasheet
