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TPC6501
TOSHIBA Transistor Silicon NPN Epitaxial Type
TPC6501
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
• • • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating 20 10 7 2.0 3.5 200 0.8 1.6 150 −55 to 150 Unit V V V A mA W °C °C
JEDEC JEITA TOSHIBA
― ― 2-3T1A
Note: Mounted on FR4 board (glass epoxy, 1.
TPC6501 Datasheet
