TPC8022-H
TPC8022-H ..
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U- MOS III)
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications CCFL Inverter Applications z Small footprint due to a small and thin package z High speed switching z Small gate charge : QSW = 3.5 n C (typ.) z Low drain- source ON-resistance: RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance: |Yfs| = 15 S (typ.) z Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) z Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 m A) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 2a) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 40 40 ±20 7.5 30 1.9 1.0 26 7.5 0.08 150
- 55 to 150 Unit V V V A W W m J A m J °C °C
1 2 3 4
JEDEC JEITA TOSHIBA
― ― 2-6J1B
Weight: 0.085 g...
