TPC8029
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
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- Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 m A) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 ±20 18 72 1.9 Unit V V V A
JEDEC JEITA TOSHIBA
― ― 2-6J1B
Drain power dissipation
Weight: 0.08 g (typ.)
Circuit...
