Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
- Small footprint due to a small and thin package
- High-speed switching
- Small gate charge: QSW = 16 nC (typ.)
- Low drain-source ON-resistance:
RDS (ON) = 3.1 mΩ (typ.) (VGS = 4.5 V)
- High forward transfer admittance: |Yfs| = 63 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0...