Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U- MOSII)
TPC8104- H
High Speed and High Efficiency DC- DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications l Small footprint due to small and thin package l High speed switching l Small gate charge : Qg = 17 nC (typ.) l Low drain- source ON resistance : RDS (ON) = 38 mΩ (typ.) l High forward transfer admittance : |Yfs| = 7.0 S (typ.) l Low leakage current : IDSS =
- 10 µA (max) (VDS =
- 30 V) l Enhancement- mode : Vth =
- 0.8~- 2.0 V (VDS =
- 10 V, ID =
- 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source...
