The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TPC8204
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TPC8204
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
l Small footprint due to small and thin package l Low drain−source ON resistance l Low leakage current l Enhancement−mode : RDS (ON) = 16 mΩ (typ.) l High forward transfer admittance : |Yfs| = 18 S (typ.) : IDSS = 10 µA (max) (VDS = 20 V) : Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 ±12 6 24 1.5 W PD(2) 1.
TPC8204 Datasheet
