Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)
High Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications
6.0±0.3
Unit: mm
0.5±0.1 1.27 8 0.4±0.1 5 0.05 M A
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- -
- -
- Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.7 nC (typ.)
5.0±0.2
0.15±0.05
1 0.95±0.05
0.595 A
High forward transfer admittance: |Yfs| = 3.3S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
5.0±0.2
S 1 4
0.6±0.1
4.25±0.2
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ)...