The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TPCA8039-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPCA8039-H
High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
1.27 0.4 ± 0.1
8
0.05 M A
5
6.0 ± 0.3 5.0 ± 0.2
• Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 8.6 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 99 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
0.95 ± 0.05
0.15 ± 0.05
0.166 ± 0.05
1
4
0.595
A
5.0 ± 0.2
0.05 S S
1
4
1.1 ± 0.2
0.6 ± 0.1
3.5 ± 0.
TPCA8039-H Datasheet
