Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
6.0 ± 0.3 5.0 ± 0.2
Unit: mm
1.27 0.4 ± 0.1 8 5 0.05 M A
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- Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 17nC (typ.)
0.15 ± 0.05
1 0.95 ± 0.05
0.595 0.166 ± 0.05 4 A
Low drain-source ON-resistance: RDS (ON) = 2.8 mΩ (typ.) ( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 141 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)
5.0 ± 0.2
1 0.6 ±...