TPCA8105 Description
TPCA8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Portable Equipment Applications Small footprint due to pact and slim package Low drain-source ON-resistance : RDS (ON) = 23 mΩ (typ.) (VGS = − 4.5V） High forward transfer admittance :|Yfs| = 14 S (typ.) Low leakage current : IDSS = −10 μA (VDS = −12 V) Enhancement mode.