TPCP8007-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
- Small footprint due to a small and thin package
- High-speed switching
- Small gate charge: QSW = 2.7 n C (typ.)
- Low drain-source ON-resistance:
RDS (ON) = 40 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 16 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
- Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulsed (Note 1)
Drain power dissipation
(t = 5 s) (Note 2a)
Drain power dissipation
(t = 5 s) (Note 2b)
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP...
