TPCP8601
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
High-Speed Switching Applications DC-DC Converter Applications Strobo Flash Applications
0.33±0.05
0.05 M A
Unit: mm
2.4±0.1 2.8±0.1
- High DC current gain: h FE = 200 to 500 (IC =
- 0.6 A)
- Low collector-emitter saturation: VCE (sat) =
- 0.19 V (max)
- High-speed switching: tf = 35 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
0.65 2.9±0.1
0.025 S 0.17±0.02
0.05 M B
0.8±0.05
+0.1 -0.11
Characteristic
Symbol
Rating
Unit
1.12+-00..1132
Collector-base voltage
VCBO
- 20
Collector-emitter voltage
VCEO
- 20
Emitter-base...
