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TPCP8901
TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)
TPCP8901
Portable Equipment Applications Switching Applications
0.33±0.05
0.05 M A
8
5
Unit: mm
• Small footprint due to small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC = −0.1 A)
:NPN hFE = 400 to 1000 (IC = 0.1 A) • Low collector-emitter saturation : PNP VCE (sat) = −0.20 V (max)
: NPN VCE (sat) = 0.17 V (max) • High-speed switching : PNP tf = 70 ns (typ.)
: NPN tf = 85 ns (typ.)
0.475
1
4
0.65
2.9±0.1
S
0.025 S 0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1 -0.11
2.4±0.1 2.8±0.1
Absolute Maximum Ratings (Ta = 25°C)
1.12+-00..
TPCP8901 Datasheet
