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TPCP8F01 - Multi-chip Device Epitaxial Transistor

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  • BA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such.

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Datasheet Details

Part number TPCP8F01
Manufacturer Toshiba
File Size 273.50 KB
Description Multi-chip Device Epitaxial Transistor
Datasheet download datasheet TPCP8F01 Datasheet

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TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type www.DataSheet4U.com TPCP8F01 2.4±0.1 0.475 1 4 • • • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) (PNP Transistor) Low collector-emitter saturation: VCE (sat) = −0.19 V (max) (PNP Transistor) High-speed switching: tf = 40 ns (typ.) (PNP Transistor) 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 Absolute Maximum Ratings (Ta = 25°C) Transistor Characteristics Collector-base voltage Symbol VCBO VCEO VEBO DC Pulse IC ICP IB PC (Note 1) Tj Rating −30 −20 −7 −3.0 −5.0 −250 1.0 150 Unit V 1.Source 2.Collector 3.Collector 4.Collector 5.Emitter 6.Base 7.Gate 8.Drain 1.12 +0.13 -0.12 0.28 +0.1 -0.
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