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TPCP8J01 - Multi-chip Device Epitaxial Transistor

Features

  • 1 0.1 1 Drain-source voltage VDS (V) 7 2006-11-17 TPCP8J01 BRT www. DataSheet4U. com 8 2006-11-17 TPCP8J01 www. DataSheet4U. com.

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Datasheet Details

Part number TPCP8J01
Manufacturer Toshiba
File Size 337.16 KB
Description Multi-chip Device Epitaxial Transistor
Datasheet download datasheet TPCP8J01 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPCP8J01 TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type www.DataSheet4U.com TPCP8J01 Notebook PC Applications Portable Equipment Applications • • • • • • Lead(Pb)-Free Small mounting area due to small and thin package Low drain-source ON resistance: P Channel RDS (ON) = 27 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = −10 μA (VDS = −32 V) Enhancement-mode: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B 0.8±0.
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