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TPCP8J01
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
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TPCP8J01
Notebook PC Applications Portable Equipment Applications
• • • • • • Lead(Pb)-Free Small mounting area due to small and thin package Low drain-source ON resistance: P Channel RDS (ON) = 27 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = −10 μA (VDS = −32 V) Enhancement-mode: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
0.33±0.05 0.05 M A
8 5
Unit: mm
2.4±0.1 0.475
1 4
0.65 2.9±0.1
B A
0.05 M B
0.8±0.