TPCS8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8201
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Unit: mm
l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance: |Yfs| = 13 S (typ.) l Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) l Enhancement-mode: Vth = 0.5~1.
TPCS8201 Datasheet
