TPCS8201
TPCS8201 is MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance: |Yfs| = 13 S (typ.) l Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) l Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20kΩ) Gate-source voltage
Drain curren
DC Pulse
(Note 1) (Note 1)
Single-device
Drain power dissipation operation (Note 3a)
(t = 10s) (Note 2a)
Single-device value at dual operation
(Note 3b)
Single-device
Drain power dissipation operation (Note 3a)
(t = 10s) (Note 2b)
Single-device value at dual operation
(Note 3b)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy Single-device value at operation
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
VDSS VDGR...
