Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
Lithium Ion Secondary Battery Applications
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- Lead(Pb)-Free Small footprint due to small and thin package Low source-source ON resistance: RSS (ON) = (22)mΩ (typ.) High forward transfer admittance: |Yfs| = (25) S (typ.) Low leakage current: ISSS = 10 µA (max) (VSS = 30 V) Enhancement-model: Vth = 0.5to1.2 V(VSS = 10 V, IS = 200 mon drain
TENTATIVE
Unit: mm
3.8±0.1 1 0.45 0.45 4
2.0±0.1
3 2 B
0.025 M B
A)
Maximum Ratings (Ta = 25°C)
Characteristics Source-source voltage Gate-source voltage Source current DC Pulse (Note 1) (Note 1) Symbol VSSS VGSS IS ISP PD PD EAS IAR EAR Tch...