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TPCT4204 - Field Effect Transistor Silicon N Channel MOS Type

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TPCT4204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCT4204 Lithium Ion Secondary Battery Applications • • • • • • • Lead(Pb)-Free Small footprint due to small and thin package Low source-source ON resistance: RSS (ON) = (22)mΩ (typ.) High forward transfer admittance: |Yfs| = (25) S (typ.) Low leakage current: ISSS = 10 µA (max) (VSS = 30 V) Enhancement-model: Vth = 0.5to1.2 V(VSS = 10 V, IS = 200 Common drain TENTATIVE Unit: mm 3.8±0.1 1 0.45 0.45 4 2.0±0.1 3 2 B 0.025 M B A) 0.6 0.05 Maximum Ratings (Ta = 25°C) Characteristics Source-source voltage Gate-source voltage Source current DC Pulse (Note 1) (Note 1) Symbol VSSS VGSS IS ISP PD PD EAS IAR EAR Tch Tstg Rating 30 ±12 6 24 1.7 0.51 TBD 6 0.17 150 −55to150 Unit V V A W W mJ A mJ °C °C 0.14 0.04 0.
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