The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon PNP Epitaxial Type
TTA007
TTA007
High-Speed Switching Applications DC-DC Converter Applications
Unit: mm
• High DC current gain : hFE = 200 to 500 (IC = −0.1 A) • Low collector-emitter saturation voltage : VCE(sat) = −0.2 V (max) • High-speed switching : tf = 70 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−7
V
Collector current
DC
IC
Pulse
ICP
−1 A
−2
Base current
IB
−0.1
A
t = 10 s
PC
Collector power dissipation
1.1 W
DC
(Note 1)
0.7
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to150
°C
Note1: Mounted on FR4 board (glass epoxy; 645 mm2,1.
TTA007 Datasheet
